| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS semiconductor device which method prevents side etching into an oxide film, and enables precise control of the dimension of a portion of an L-shaped side wall spacer that extends outward along the main surface of a semiconductor board. SOLUTION: The method for manufacturing the MOS semiconductor device having an LDD (lightly doped drain) structure includes a process of forming an insulating film and a dissimilar film, in which a sufficient etching selection ratio to the insulating film can be obtained on the surface of a gate electrode; a process of anisotropically etching the dissimilar film and insulating film to remove only the dissimilar film to form the L-shaped side wall spacer on the side face of the gate electrode; a process of injecting an impurity ion into an element formation region of the semiconductor board, using the gate electrode and L-shaped side wall spacer as a mask, to form a high-concentration impurity region and a low-concentration impurity region; and a process of subjecting the semiconductor board to heat treatment to activate the high-concentration impurity region and low-concentration impurity region. COPYRIGHT: (C)2007,JPO&INPIT
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