| 摘要 |
The lowering of the manufacturing yield of semiconductor products resulting from the contamination impurities from the back surface of a semiconductor wafer is suppressed. When making thin semiconductor wafer 1, the first crushing layer formed by grinding the back surface of semiconductor wafer 1 with the first and second abrasive which has fixed abrasive is removed. Thereby, the die strength after dividing or mostly dividing semiconductor wafer 1 and making a chip is secured. Then, from the back surface side of semiconductor wafer 1, laser beam 16 is irradiated in the predetermined region of the predetermined depth from the back surface of semiconductor wafer 1, and for example, second crushing layer 15 with the gettering function of less than 1.0 mum, less than 0.5 mum, or less than 0.1 mum in thickness is formed newly.
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