| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to reduce the leakage current of a bit line and to improve refresh characteristics of the device by acquiring a nonuniform thickness from a gate insulating layer using an additional oxide layer formed at a sidewall of a recess channel region. A semiconductor device includes a semiconductor substrate(110) with an isolation layer(120) for defining an active region, a recess channel region, a gate insulating layer and a gate electrode. The recess channel region is formed within the active region. The recess channel region includes a vertical channel region and a horizontal channel region. The gate insulating layer(160) is formed on the active region including the recess channel region. The thickness of the gate insulating layer is different corresponding to the vertical channel region, the horizontal channel region and the active region. The gate electrode(197) is formed on the gate insulating layer in the recess channel region.</p> |
