CHARGE TRAP NONVOLATILE MEMORY DEVICE AND METHODS OF FABRICATING THE SAME

摘要

A charge trap nonvolatile memory device and a manufacturing method thereof are provided to prevent the degradation of reliability according to a horizontal diffusion of charge and to prevent the damage of a charge trap pattern by using memory cell patterns separated from each other. A charge trap nonvolatile memory device includes isolation patterns(110) for defining cell active regions and peripheral active regions on a semiconductor substrate, cell gate electrodes(205) for crossing the cell active regions, memory cell patterns, and a tunnel insulating layer. The memory cell patterns(300) are interposed between the cell gate electrodes and the cell active regions and prolonged to upper portions of the isolation patterns. The tunnel insulating layer is interposed between the memory cell pattern and the cell active region.