| 发明名称 |
NEW ESTER COMPOUND, MACROMOLECULAR COMPOUND, RESIST MATERIAL, AND PATTERN FORMING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist material having excellent resolution, transparency and etching resistance in ArF exposure, and exhibiting the high performance even in ArF-immersion lithography. <P>SOLUTION: The resist material contains a repeating unit (2) obtained by the polymerization of a compound of general formula (1) (in the formulas, R<SP>1</SP>is F or a fluorinated alkyl group; R<SP>2</SP>is H or an alkyl group; R<SP>3</SP>is O or an alkylene group; R<SP>4</SP>and R<SP>5</SP>are each H, an alkyl group or a fluorinated alkyl group; and R<SP>6</SP>is H or an acid-unstable group). <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007153982(A) |
申请公布日期 |
2007.06.21 |
| 申请号 |
JP20050349110 |
申请日期 |
2005.12.02 |
| 申请人 |
SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD;CENTRAL GLASS CO LTD |
发明人 |
HARADA YUJI;HATAKEYAMA JUN;KAWAI YOSHIO;SASAKO MASARU;ENDO MASATAKA;MAEDA KAZUHIKO;KOMORIYA HARUHIKO;OTANI MITSUTAKA |
| 分类号 |
C08F20/28;C07D307/93;C07D493/18;C08F220/28;C08F232/08;G03F7/004;G03F7/039;H01L21/027 |
主分类号 |
C08F20/28 |
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