| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve yiled and light extracting efficiency in separating a wafer into individual light-emitting elements. <P>SOLUTION: From a wafer 1000w (2. A), a sapphire substrate used for epitaxial growth is removed by a laser lift-off method. The wafer has a front surface where a conductive multilayer film fm, group III nitride-based compound semiconductor layers 11, 12, and an n electrode 130 are formed on an n-type silicon substrate 200; and a rear surface where a conductive multilayer film 230 is formed. A cut surface fd having a taper is formed from the semiconductor layers 11, 12, and the semiconductor layers 11, 12 are separated for each individual element (2. B). A cut surface bd is formed from the rear surface side at the depth of 1/3 of the thickness of the n-type silicon substrate 200 (2. C). Subsequently, the cutting surfaces fd and bd of the front and rear surfaces of the wafer 1000w are seamed by a known breaking process to acquire individual light-emitting elements 1000 (2. D). The cut surface fd may be made into a tapered shape of the same angle (2. E) or a tapered shape of a changing angle (2. F). <P>COPYRIGHT: (C)2007,JPO&INPIT |
