发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR FILM, AND LASER TREATMENT METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor film for irradiating the semiconductor film with laser beams. SOLUTION: An oscillator oscillates laser beams which pass through a cylindrical concave lens and a first cylindrical convex one, thus extending the laser beams in a first direction of the section of the laser beams. The laser beams pass through a first fly eye lens, thus uniformizing the distribution of energy density in a first direction. The laser beams pass through a second fly eye lens, thus uniformizing the distribution of the energy density in a second direction orthogonally crossing the first one. The laser beams are extended in the second direction which pass through the second cylindrical convex lens, thus allowing the laser beams to converge in the first direction, and applying the laser beams through the second cylindrical convex lens to the semiconductor film. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007158376(A) 申请公布日期 2007.06.21
申请号 JP20070034243 申请日期 2007.02.15
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;ZHANG HONGYONG
分类号 H01L21/20;H01L21/268;B23K26/00;B23K26/06;B23K26/067;B23K101/40;C23C14/58;C23C16/56;G02B13/00;G02B27/09;G02F1/00;G02F1/35;H01L21/00;H01L21/02;H01L21/26;H01L21/265;H01L21/322;H01L21/324;H01S3/00;H01S3/09;H01S3/097;H01S5/024 主分类号 H01L21/20
代理机构 代理人
主权项
地址