发明名称 |
Modulation of stress in stress film through ion implantation and its application in stress memorization technique |
摘要 |
Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains/memorizes thereby increasing device performance.
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申请公布号 |
US2007141775(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20050304412 |
申请日期 |
2005.12.15 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
TEO LEE W.;QUEK ELGIN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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