发明名称 Magnetic memory device
摘要 A width and a thickness of a bit line are represented as W 1 and T 1 , respectively, a thickness of a digit line is represented as T 2 , and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L 1 . A width of the digit line is represented as W 2 , and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L 2 . The distances L 1 and L 2 and the cross-sectional areas S 1 and S 2 are set in such a manner that when L 1 /L 2 >=1, a relation of (1/3).(L 1 /L 2 )<=S 2 /S 1 <=1 is satisfied and when L 1 /L 2 <=1, a relation of 1<=S 2 /S 1 <=3(L 1 /L 2 ) is satisfied.
申请公布号 US2007139999(A1) 申请公布日期 2007.06.21
申请号 US20070698872 申请日期 2007.01.29
申请人 RENESAS TECHNOLOGY CORP. 发明人 OKUMURA YOSHINORI;UENO SHUICHI;FURUTA HARUO
分类号 G11C11/14 主分类号 G11C11/14
代理机构 代理人
主权项
地址