发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A semiconductor device which combines reliability and the guarantee of electrical characteristics is provided. A power MOSFET and a protection circuit formed over the same semiconductor substrate are provided. The power MOSFET is a trench gate vertical type P-channel MOSFET and the conduction type of the gate electrode is assumed to be P-type. The protection circuit includes a planar gate horizontal type offset P-channel MOSFET and the conduction type of the gate electrode is assumed to be N-type. These gate electrode and gate electrode are formed in separate steps.
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申请公布号 |
US2007138566(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20060610704 |
申请日期 |
2006.12.14 |
申请人 |
SUZUKI HIROKATSU;FUJIKI ATSUSHI;NAKAZAWA YOSHITO |
发明人 |
SUZUKI HIROKATSU;FUJIKI ATSUSHI;NAKAZAWA YOSHITO |
分类号 |
H01L29/94;H01L21/8238 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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