GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

Disclosed is a gallium nitride compound semiconductor light-emitting device having excellent light-extraction efficiency and comprising a positive electrode having an opening. Specifically disclosed is a gallium nitride compound semiconductor light-emitting device wherein an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each composed of a gallium nitride compound semiconductor are arranged in this order on a substrate and a positive electrode and a negative electrode are respectively formed in contact with the p-type semiconductor layer and the n-type semiconductor layer. This gallium nitride compound semiconductor light-emitting device is characterized in that the positive electrode has an opening and at least a part of the surface of the p-type semiconductor layer in the opening has a rough surface resulting from spherical granules.