发明名称 HIGH-FREQUENCY SUBSTRATE AND PROCESS FOR PRODUCING THE SAME
摘要 <p>A technique by which a high-frequency substrate having excellent conductor adhesion can be obtained. The high-frequency substrate comprises a base material and a conductor adherent thereto, the base material comprising a polymer obtained by graft-polymerizing up to 1 wt.% monomer having an affinity for the conductor with a fluoropolymer. A film of a fluoropolymer is irradiated with electron beams or otherwise treated to form active sites reactive in graft polymerization. Thereafter, this fluoropolymer film is introduced into a solution of a monomer having an affinity for the conductor to conduct graft polymerization. The conductor is adhered to the graft polymer to produce the substrate. In the graft polymerization step, the degree of grafting of the monomer is regulated to 1 wt.% or lower based on the fluoropolymer.</p>
申请公布号 WO2007069491(A1) 申请公布日期 2007.06.21
申请号 WO2006JP324197 申请日期 2006.12.05
申请人 JAPAN ATOMIC ENERGY AGENCY;KYUSHU HITACHI MAXELL, LTD.;TAMADA, MASAO;SEKO, NORIAKI;SAKATA, EIJI;ITOH, NAOKI 发明人 TAMADA, MASAO;SEKO, NORIAKI;SAKATA, EIJI;ITOH, NAOKI
分类号 H05K1/03;C08J7/00;C08J7/06;H01L23/12;H01L23/14 主分类号 H05K1/03
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