发明名称 LIQUID FOR LIQUID IMMERSION EXPOSURE PROCESS, AND METHOD OF FORMING RESIST-PATTERN USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern using liquid for a liquid immersion exposure process having extremely high transparency, and a refractive index that is higher than that of water at a wavelength range of 200 nm or smaller. <P>SOLUTION: The resist pattern is formed by using the liquid for a liquid immersion exposure process containing a phosphor compound having a specific molecular structure at a wavelength range of 200 nm or smaller. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007157757(A) 申请公布日期 2007.06.21
申请号 JP20050346774 申请日期 2005.11.30
申请人 MITSUBISHI GAS CHEM CO INC 发明人 MATSUMURA KOUEI;KIMURA YOSHIYA;KIYAMA NAOYUKI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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