| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element of high light taking-out efficiency. <P>SOLUTION: The semiconductor light emitting element of which the light emitted from a light emitting layer is taken out of a substrate side comprises a substrate; a first semiconductor layer formed on the substrate; a light emitting layer formed on the first semiconductor layer; a light emitting region which includes a second semiconductor layer formed on the light emitting layer, and is regulated inside by a loop-like recess that penetrates the second semiconductor layer and the light emitting layer to reach the first semiconductor layer; a semiconductor of which, adjoining the light emitting region through the recess, the end on the side opposite to the recess comprises the semiconductor layer, the light emitting layer, and a non light emitting region which is so formed as tilted from the normal direction of the substrate at least at a part of the first semiconductor layer; an insulating transparent member packed in the recess; a first electrode which is formed on the portion formed tilted from the substrate normal direction among the end opposite to the recess in the non light emitting region, and is connected electrically to the first semiconductor layer; and a second electrode formed on the second semiconductor layer in the light emitting region. <P>COPYRIGHT: (C)2007,JPO&INPIT |
