| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing metallic oxide microparticles for abrasive, capable of performing CMP in a short time without causing grinding defects on a silicon oxide membrane, a metal embedded membrane and the like in CMP technologies such as interlayer insulating film planarization, shallow trench separation forming and metal embedding wiring forming, to provide an abrasive containing the metallic oxide microparticles produced by the method, and to provide a method for grinding substrates and a method for producing the semiconductor devices by using the abrasive. <P>SOLUTION: The method for producing the metallic oxide microparticles for an abrasive is characterized by finely forming droplets from a solution containing a metallic compound and an organic material and heat treating the droplets. The abrasive comprises the metallic oxide microparticles for an abrasive, produced by the method. The method for grinding the substrates and the method for producing the semiconductor devices by using the abrasive are provided. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
