| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of downsizing when a TFT with an annular gate electrode is included. SOLUTION: The semiconductor device has a structure in which a silicon layer, a gate insulation film, and a gate electrode are provided on a substrate in this order; and includes a first thin film transistor and a second thin film transistor of different conductivity types. The gate electrode is annular in a plan view. The silicon layer has a channel region opposite to the gate electrode, an inward diffusion region provided inside the channel region, and an outward diffusion region provided outside the channel region. The first and second thin film transistors are coupled with each other on their outward diffusion regions, thereby constituting the semiconductor device. COPYRIGHT: (C)2007,JPO&INPIT |
