| 摘要 |
PROBLEM TO BE SOLVED: To form a plated feeding layer with high adhesion force to a substrate and with small stress to the substrate on the GaAs substrate. SOLUTION: A NiP film 4 is formed on the GaAs substrate 1 and it is heat-treated. Thus, Ni included in the NiP film 4 is diffused to a GaAs substrate 1-side. Consequently, an NiGaAs layer 5 is formed in an interface between the GaAs substrate 1 and the NiP film 4. A film thickness ratio of the NiGaAs layer 5 to the NiP film 4 is set to become less than 1.5. Adhesion force to the GaAs substrate 1 is made high, and the plated feeding layer (NiP film 4) giving small stress to the GaAs substrate 1 can be obtained. COPYRIGHT: (C)2007,JPO&INPIT |
