| 摘要 |
There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.
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