| 摘要 |
A thin film transistor array substrate is provided. The thin film transistor array substrate includes a substrate; a gate pattern of a gate electrode and a gate line connected to the gate electrode on the substrate; a main gate insulating film formed of an organic material to cover the gate pattern; a semiconductor pattern overlapping the gate line such that the main gate insulating film is disposed between semiconductor patter and the gate line; a source/drain pattern on the semiconductor pattern. The source/drain pattern has a data line crossing the gate line with the main gate insulating film therebetween, a source electrode and a drain electrode, Here, the source electrode, the drain electrode and the semiconductor pattern define a thin film transistor disposed at the intersection between the gate line and the data line. The thin film transistor array substrate further includes a protective film defining a contact hole at a portion of the drain electrode; a pixel electrode contacting the drain electrode through the contact hole; and a sub gate insulating pattern disposed between the gate pattern and the main gate insulating film overlapping the gate pattern. The sub gate insulating pattern includes a ferroelectric material.
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