发明名称 Solid-state imaging apparatus
摘要 A plurality of pixel sets each of 16 pixels are vertically provided successively one after another. A vertical transfer path 2 has two groups a and b of transfer electrodes 1 a , 1 b to 16 a , 16 b. Two like sequence transfer electrodes in the two electrode groups are provided for each of the pixels in each set. Each pixel is connected via a shift gate 3 to each transfer channel corresponding to each of the transfer electrodes in the electrode group a. To the transfer electrodes in the electrode group a, independent shift/transfer pulse application lead lines 4 A are connected for applying independent gate pulses to the individual shift gates in addition to transfer pulses. Common lead lines are connected to the transfer electrodes 2 a and 4 a , 5 a and 7 a , 10 a , 12 a, and 13 a and 15 a. Transfer pulse application lead lines 4B are connected to the transfer electrodes in the electrode group b. Thus, a CCD imaging device is constructed, which is capable of performing a desired read-out operation by 4-phase driving. The invention realizes a solid-state imaging device capable of reducing the numbers of lead lines for shift gate control gate electrodes for charge read-out to a vertical transfer path and external circuit connection terminals and is capable of a special read-out, such as a multiple rate read-out.
申请公布号 US2007139404(A1) 申请公布日期 2007.06.21
申请号 US20070705478 申请日期 2007.02.12
申请人 KIDONO MASAMI;YOSHIDA HIDEAKI 发明人 KIDONO MASAMI;YOSHIDA HIDEAKI
分类号 G09G5/00;H01L27/148;H04N5/335;H04N5/341;H04N5/345;H04N5/3728;H04N5/378;H04N9/04 主分类号 G09G5/00
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