| 摘要 |
<P>PROBLEM TO BE SOLVED: To maintain polishing pressure almost at a constant level through the entire polishing process. <P>SOLUTION: A polishing method comprises alternately executing the following first and second steps: in the first step, a distance between a load detection face of a load cell and a polishing head 20 is maintained at a prescribed interval after positioning the polishing head 20 at a position above the load cell 81, high-pressure air is supplied into a pressure chamber of the polishing head while bringing a polishing pad 42 into contact with the load detection face, and pressure of the high-pressure air detected by the load cell when a pressing load from the polishing head matches a target value is detected as supply pressure pp during polishing; and in the second step, a distance between the surface of a wafer W and the polishing head is maintained at a prescribed interval after positioning the polishing head at a position above the wafer W, high-pressure air is supplied into the pressure chamber while bringing the polishing pad into contact with the surface of the wafer W, and the wafer W is polished in a state of maintaining the pressure inside the pressure chamber at the supply pressure pp detected in the first step in polishing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
