| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which destruction of data due to charge pumping phenomenon can be prevented. SOLUTION: The semiconductor memory device is provided with memory cells storing data according to the number of a large number of carriers in a floating body, a memory cell array including a plurality of memory cells, word lines provided at rows of the memory cell array, a counter cell array storing the number of times that the word line is activated, bit lines provided at columns of the memory cell array, an adder in which the number of times of activation of the word line read out from the counter cell array is incremented at a reading or writing operation, a counter buffer circuit in which the number of times of activation is stored and incremented number of times of activation is written back to the counter cell array, and a sense amplifier in which when the number of times of activation reaches the prescribed value in a read-out cycle or a write-in cycle, data is written back to the memory cell connected to the word line during the cycle. COPYRIGHT: (C)2007,JPO&INPIT
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