GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a gallium nitride compound semiconductor light-emitting device having high light extraction efficiency and low driving voltage (Vf). Specifically disclosed is a gallium nitride compound semiconductor light-emitting device wherein a light-transmitting conductive oxide film containing a dopant is arranged on a p-type semiconductor layer. In this gallium nitride compound semiconductor light-emitting device, the dopant concentration at the interface between the p-type semiconductor layer and the light-transmitting conductive oxide film is set higher than the bulk dopant concentration of the light-transmitting conductive oxide film, thereby reducing the contact resistance between the p-type semiconductor layer and the light-transmitting conductive oxide film.