| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for plasma processing which has excellent mass production stability by controlling a film deposited on the inner wall of a vacuum processing vessel. SOLUTION: The apparatus includes: a gas ring which constitutes a part of a vacuum processing chamber 2 and has a supply opening for a processing gas; a bell jar 12 which covers the upper portion of the gas ring to form the vacuum processing chamber; antennas 1a and 1b which are arranged at the upper portion of the bell jar 12 and supplies high frequency electric field in the vacuum processing chamber to produce a plasma; a mounting table 5 on which a sample 13 is mounted in the vacuum processing chamber; a Faraday shield 8 which is arranged between each of the antennas 1a and 1b and the bell jar 12, and to which a high frequency bias voltage is applied; and a deposition-preventing plate detachably attached to the inner surface of the gas ring except for the supply opening of the processing gas; wherein the area of the inner surface of the gas ring including the deposition-preventing plate, which can be seen from the sample plane, is set substantially equal to or greater than 1/2 of the area of the sample. COPYRIGHT: (C)2007,JPO&INPIT
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