| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method of controlling a boundary between a compressive and a tensile portion of a dual-stress liner in a semiconductor device. SOLUTION: The boundary may be appropriately designed to be located by a predetermined distance as measured from a PFET feature, such as a boundary of a channel or an active region 301, rather than being determined by an N-well 302 boundary 360, 361, 362, 363. This allows providing an opportunity to improve and/or match the performance of a PFET 350. By appropriately designing the boundary between a compressive portion 305 and a tensile portion of the dual-stress liner, the compressive stress on a PFET can be reduced in the y direction while maintained or increased in the x direction, whereby the performance of the PFET can be improved. COPYRIGHT: (C)2007,JPO&INPIT
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