| 摘要 |
A semiconductor memory ( 26 ) having a plurality of memory cells ( 25 ), the semiconductor memory ( 26 ) having a substrate ( 1 ), at least one wordline ( 2 ) and first ( 3 ) and second lines ( 4 ). Each memory cell ( 25 ) of the plurality of memory cells ( 25 ) includes a fin ( 15 ) of semiconductor material, the fin ( 15 ) having a top surface ( 5 ), first ( 6 ) and second ( 7 ) opposing sidewalls and first ( 8 ) and second ( 9 ) opposing ends. The fin ( 15 ) extends along a first direction (X). Each memory cell ( 25 ) also includes a charge-trapping layer ( 11 ) disposed on the first ( 6 ) and second ( 7 ) sidewalls of said fin ( 15 ), a patterned first insulating layer ( 10 ) disposed on the top surface ( 5 ) of the fin ( 15 ), wherein the first insulating layer ( 10 ) abuts the top surface ( 5 ) of the fin ( 15 ) and the charge-trapping layer ( 11 ). Each memory cell ( 25 ) also includes a first doping region ( 12 ) coupled to the first end ( 8 ) of said fin ( 15 ) and a second doping region ( 13 ) coupled to the second end ( 9 ) of the fin ( 15 ).
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