| 摘要 |
A method for forming a metal interconnection structure in a semiconductor device is provided. In one embodiment, first and second diffusion barrier layers are sequentially formed, and then an aluminum pad is formed on the diffusion barrier layers. The first diffusion barrier layer may be made of titanium-silicon-nitride. In addition, the second diffusion barrier layer may be made of titanium, titanium-nitride, or titanium/titanium-nitride.
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