METHOD FOR MAKING A REFLECTION LITHOGRAPHIC MASK AND MASK OBTAINED BY SAID METHOD

摘要

The invention concerns a method for making an extreme ultraviolet reflection lithophotographic mask, comprising a substrate (40), a mirror structure (42) deposited uniformly on the substrate, and an absorbing element (50) forming a pattern on the mirror substrate. The invention is characterized in that the absorbing element is obtained by exposure followed by development of an organometallic resin deposited on the mirror structure.