| 摘要 |
A method for manufacturing a semiconductor device is provided to simplify manufacturing processes, to reduce fabrication costs, to prevent a short channel effect and to reduce a connection resistance of a junction layer by performing sequentially an SEG(Selective Epitaxial Growth) and a selective tungsten deposition using in-situ processing. A gate electrode(130) is formed on a semiconductor substrate(100). A junction layer(150) is formed at both sides of the gate electrode on the substrate. A selective tungsten layer(161) is sequentially formed on the junction layer under a vacuum condition. The junction layer is formed by forming a doped ion layer in the substrate and performing an SEG on the doped ion layer.
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