发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER |
摘要 |
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R<SUP>1 </SUP>is a hydrogen atom or methyl group; R<SUP>3 </SUP>is a cyclic group selected from an alicyclic group and an aromatic group; R<SUP>4 </SUP>is a polar group; R<SUP>2 </SUP>is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R<SUP>5 </SUP>is a hydrogen atom or methyl group).
|
申请公布号 |
US2007142592(A1) |
申请公布日期 |
2007.06.21 |
申请号 |
US20070679754 |
申请日期 |
2007.02.27 |
申请人 |
ASAKAWA KOJI;OHASHI KENICHI;FUJIMOTO AKIRA;SASAKI TAKASHI |
发明人 |
ASAKAWA KOJI;OHASHI KENICHI;FUJIMOTO AKIRA;SASAKI TAKASHI |
分类号 |
C08F222/14;C08F22/14;C08F220/28;H01L21/00;H01L21/306;H01L21/308;H01L21/78;H01L33/22 |
主分类号 |
C08F222/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|