发明名称 Semiconductor device
摘要 In a semiconductor device having a multilayer interconnection structure, wires are formed by a damascene process, at least part of electrode pads includes a first conductive layer having a region provided for an electrical connection with an external unit. Herein, the first conductive layer is formed on a passivation film that is formed a semiconductor substrate and is indispensable for the multilayer interconnection structure.
申请公布号 US2007138638(A1) 申请公布日期 2007.06.21
申请号 US20060594875 申请日期 2006.11.09
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 OTA YUKITOSHI;NAGAI NORIYUKI;HAMATANI TSUYOSHI
分类号 H01L23/52 主分类号 H01L23/52
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