SHALLOW TRENCH ISOLATION METHOD FOR MANUFACTURING CMOS IMAGE SENSOR DEVICE

摘要

A method for forming a shallow trench isolation layer of a CMOS image sensor is provided to reduce fabrication costs by using a conventional mask in a reverse etching process. A trench is formed on a wafer having a pad oxide layer and a silicon nitride layer by using photo/etch processes. A field oxide layer is formed in the trench of the resultant structure. The field oxide layer is removed from the resultant structure by using a reverse etching process and a CMP process. At this time, the silicon nitride layer is exposed to the outside. The exposed silicon nitride layer is removed from the resultant structure. The field oxide layer removing process is performed by using a conventional mask.