NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING NITRIDE SEMICONDUCTOR LASER DEVICE

摘要

A nitride semiconductor light emitting device and a method of fabricating a nitride semiconductor laser device are provided to be driven in a high output without damage of reliability due to a cavity having a deteriorated section by coating a section of the cavity. A nitride semiconductor light emitting device includes a n-type GaN substrate(11). A n-type AlGaInN buffer layer(21) is laminated on the n-type GaN substrate(11). An n-type AlGaInN clad layer(22) is laminated on the n-type AlGaInN buffer layer(21). An n-type AlGaInN guide layer(23) is laminated on the n-type AlGaInN clad layer(22). An AlGaInN multiple quantum well active layer(24) is laminated on the n-type AlGaInN guide layer(23). A p-type AlGaInN guide layer(25) is laminated on the AlGaInN multiple quantum well active layer(24). A p-type AlGaInN clad layer(26) is laminated on the p-type AlGaInN guide layer(25). A p-type AlGaInN contact layer(27) is laminated on the p-type AlGaInN clad layer(26). A ridged stripe portion(13) is elongated lengthwise of a cavity by removing some part of the p-type AlGaInN clad layer(26) and the p-type AlGaInN contact layer(27). A p-electrode(14) is installed on a surface of the p-type AlGaInN contact layer(27). An insulation film(12) is formed on a lower part of the p-electrode(14). A n-electrode(15) is formed on a opposite surface to a laminated side of the n-type GaN substrate(11).