GALIUM-NITRIDE LIGHT EMITTING DIODE

摘要

A GaN based light emitting diode is provided to increase the efficiency of a light emission by making current uniformly injected into the light emitting diode using a one or two-dimensional metal pattern formed under or on a transparent conducting oxide layer. An N-GaN layer(12) is formed on a substrate(10). An active layer(13) is formed on the N-GaN layer. A P-GaN layer(14) is formed on the active layer. A transparent conducting oxide layer(15) is formed on the P-GaN layer. An N-electrode(17) is formed on an etched portion of the N-GaN layer. A P-electrode(18) is formed on the resultant structure. A one or two-dimensional metal pattern is interposed between the P-GaN layer and the transparent conducting oxide layer or between the transparent conducting oxide layer and the P-electrode.