| 摘要 |
In a semiconductor diode in which a zone of another conductance type is inserted into the surface of a zone of one conductance type, the zone of the other conductance type is enclosed by a ring-shaped region of the other conductance type, the depth of penetration of the ring-shaped region being less than the depth of penetration of the zone of the other conductance type. Due to appropriate doping of the ring-shaped region only the middle portion of the PN junction which possesses a curvature, participates in the electrical breakdown. The semiconductor diode according to the present invention has improved characteristic data.
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