METHOD OF FORMING AN INSULATION STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for forming an insulating structure and a method for manufacturing a semiconductor device using the same are provided to acquire uniform and excellent insulation characteristics from the insulating structure by using at least one oxidation and at least one nitridation. A first pre-oxide layer is partially formed on an object body by using a first oxidation process(S100). A pre-nitride layer is formed on the object body by changing a lower portion of the first pre-oxide layer using a nitridation process and a second pre-oxide layer is formed from the first pre-oxide layer on the pre-nitride layer(S110). A second oxidation process is performed on the resultant structure(S120). At this time, a nitride layer is formed from the pre-nitride layer on the object body, a lower oxide layer is formed from the second pre-oxide layer on the nitride layer, and an upper oxide layer is formed from the second pre-oxide layer on the lower oxide layer.