| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. <P>SOLUTION: The plasma processing system comprises a microwave generator 1, a first dielectric 15 connected with the microwave generator 1 and having a rectangular cross-section along the processing surface of the sample 12 where two opposite sides are parallel and making the field strength distribution of the microwave generated by the microwave generator 1 substantially uniform along the processing surface of the sample 12, and a means for processing the sample 12 using plasma generated in a reactor 4 by the microwave wherein the interval L<SB>d1</SB>of two opposite sides of the first dielectric 15 substantially satisfies following expression (1) L<SB>d1</SB>=n<SB>d1</SB>(λ<SB>1</SB>/2), where λ<SB>1</SB>is the wavelength of a microwave in the first dielectric and n<SB>d1</SB>is an integer of 1 or above. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
