| 摘要 |
<p>The thyristor has a lightly doped P type layer (11) at a side of a front face of the thyristor and extending below a P type case (3), where the layer has a depth greater than that of the case. A lightly doped N-type region (13) is formed in the layer beside the case, and a schottky contact is formed on the N-type region by depositing a metallization (MS). The contact is connected to a control terminal (C), where the terminal corresponds to an anode of a schottky diode which is in series with a gate of the thyristor.</p> |
