METHOD FOR FORMING STORAGENODE CONTACT IN SEMICONDUCTOR DEVICE

摘要

A method for forming a storage node contact inf a semiconductor device is provided to reduce the loss of a bit line hard mask and to prevent the short between the storage node contact and a bit line by reducing the number of dry etching processes using a previously deposited spacer. A first insulating layer is formed on a semiconductor substrate(21) having a landing plug contact(23). A plurality of bit line patterns(25) are formed on a first insulating layer. A second insulating layer is filled in a portion between bit line patterns. A spacer(27) is formed on the bit line patterns including the second insulating layer. A planarized third insulating layer is formed in the portion between the bit line patterns. A line type hard mask pattern is formed on the third insulating layer. A first hole(31a) is formed on the resultant structure by performing wet etching on the third insulating layer using the hard mask pattern as an etch mask. A second hole(31b) is formed under the first hole by performing a dry etching process on the spacer, the second insulating layer and the first insulating layer through the first hole.