MANUFACTURING METHOD FOR IMAGE SENSOR

摘要

A method for manufacturing an image sensor is provided to reduce remarkably dark current of a photodiode due to electrons by using an ion implanted layer capable of trapping the electrons of an ambient portion of an isolation layer. A heavily doped P type layer is formed at a bottom portion of a substrate(10). A shallow trench isolation layer(12) is formed on the substrate. B11 ions are implanted into the shallow trench isolation layer. An electron ground region(13) is formed by implanting BF2 ions into an ambient portion of the shallow trench isolation layer to trap electrons and make the electrons absorbed into the heavily doped P type layer.