Semiconductor aluminium contact etching - using gold basket to hold transistor

摘要

A transistor-Al layer coated with etch mask of photoresist leaving Al parts between conductor paths free, transistor being held in gold basket while immersed in etch soln avoiding Al stains and resultant short circuits between conductor paths on account of suppression of H2 evoln, high etch temp, short etch time. Etch compsn is pref. 80 ml H2O (deionised) 720 ml H3PO4(85%) 40 mol HNO3 (65%), 40ml CH3COOH (99-100%).