| 发明名称 |
Semiconductor device and die bonding method therefor |
| 摘要 |
<p>A semiconductor device comprises a semiconductor substrate (7), a first metal film (8) formed on a back surface of the semiconductor substrate (7), a second metal film (9) formed on the first metal film (8), and a third metal film (10) formed on the second metal film (9). The first metal film (8) forms an alloy with a solder (11). The second metal film (9) causes isothermal solidification of the solder (11). The third metal film (10) is for improving solder wetting property or for inhibiting oxidation.</p> |
| 申请公布号 |
EP1798763(A1) |
申请公布日期 |
2007.06.20 |
| 申请号 |
EP20060019205 |
申请日期 |
2006.09.13 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
ITO, MASAYASU;MIYAWAKI, KATSUMI;FUJINO, JUNJI |
| 分类号 |
H01L21/60;H01L23/495 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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| 主权项 |
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