发明名称 SILICON INGOT GROWING APPARATUS
摘要 A silicon ingot growing apparatus is provided to produce one or more silicon ingots in one quartz crucible and to supply stably silicon into the crucible. A silicon ingot growing apparatus includes a supply line, a measurement valve, and decelerating unit. The supply line(90) is used for connecting a hopper(50) with a crucible(10). The measurement valve is used for transferring polysilicon of the hopper to the supply line. The decelerating unit is used for controlling the flow rate of the polysilicon supplied into the crucible. The measurement valve is composed of a spherical housing for connecting the hopper and the supply line with each other, an opening/closing portion in the spherical housing, and a driving mechanism for rotating the opening/closing portion.
申请公布号 KR20070063834(A) 申请公布日期 2007.06.20
申请号 KR20050124088 申请日期 2005.12.15
申请人 SEMIMATERIALS. CO., LTD. 发明人 PARK, GUN
分类号 H01L21/208 主分类号 H01L21/208
代理机构 代理人
主权项
地址