| 摘要 |
A phase change memory device and its manufacturing method are provided to reduce effectively the current necessary for a phase change by reducing a contact area between a phase changeable layer and an upper electrode using a porous hemi-spherical Al2O3 layer. A lower pattern is formed on a semiconductor substrate(21). A first electrode is formed on the resultant structure to contact the lower pattern. A phase changeable layer(24a) is formed on the first electrode. A porous hemi-spherical Al2O3 layer(25a) is formed on the phase changeable layer. The porous hemi-spherical Al2O3 layer is capable of exposing partially the phase changeable layer to the outside. A second electrode is formed on the resultant structure.
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