METHOD FOR FABRICATING FERAM DEVICE

摘要

A method for manufacturing a ferroelectric RAM device is provided to improve polarization characteristics by reducing the leakage current using a ferroelectric film with an edge portion lengthened as much as the length of a spacer. An interlayer dielectric(32) having a contact plug(33) is formed on a semiconductor substrate(31). A first conductive layer is formed on the interlayer dielectric. A lower electrode(35) is formed on the contact plug and the interlayer dielectric adjacent to the contact plug by patterning the first conductive layer. A ferroelectric material layer, a second conductive layer and a hard mask layer(39) are sequentially formed on the interlayer dielectric. An upper electrode(38) is formed on the ferroelectric material layer by patterning the hard mask layer and the second conductive layer. An insulating layer is formed thereon. A spacer is formed selectively on the resultant structure by performing an etch-back process on the insulating layer. A ferroelectric part is formed by etching the ferroelectric material layer using the spacer and the hard mask layer as an etch mask.