| 摘要 |
An one time programmable memory device and a programming method thereof are provided to prevent repeated programming in an OTP(One Time Programmable) memory cell, by performing a program operation when the OTP memory cell is an erase cell and stopping the program operation when the OTP memory cell is a program cell. A memory cell array has a number of memory cells connected to an even bit line and an odd bit line. A page buffer is connected to the even bit line and the odd bit line, and transfers program data to the memory cells or reads programmed data. A cell state verify circuit generates a detection signal by judging whether the memory cell is a memory cell or an erase cell on the basis of the data read from the page buffer. A micro controller generates a program command in response to the detection signal.
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