| 摘要 |
<p>A method of manufacturing a photomask is provided to prevent the failure of a photoresist pattern by reducing the deviation between a first transmitting amount of light at a first periphery of a defected light shielding pattern and a second transmitting amount of light at a second periphery of a normal light shielding pattern using a transmissivity degradation region. A light shielding pattern(422) is formed on a first surface of a transparent substrate. The light shielding pattern is made of a phase shift pattern or a chrome pattern. A transmissivity degradation region(440) is formed on the resultant structure in order to prevent the deviation between a first transmitting amount of light at a first periphery of an abnormal light shielding portion(424) and a second transmitting amount of light at a second periphery of a normal light shielding portion.</p> |
