发明名称 |
PLANAR SUBSTRATE DEVICES INTEGRATED WITH FINFETS AND METHOD OF MANUFACTURE |
摘要 |
<p>A planar substrate device (100) integrated with fin field effect transistors (FinFETs) and a method of manufacture comprises a silicon-on-insulator (SOI) wafer (101) comprising a substrate (103); a buried insulator layer (105) over the substrate (103); and a semiconductor layer (115) over the buried insulator layer (105). The structure (100) further comprises a FinFET (130) over the buried insulator layer (105) and a field effect transistor (FET) (131) integrated in the substrate (103), wherein the FET (127) gate is planar to the FinFET gate (125). The structure (100) further comprises retrograde well regions (104, 106, 108, 110) configured in the substrate (103). In one embodiment, the structure (100) further comprises a shallow trench isolation region (111) configured in the substrate (103).</p> |
申请公布号 |
KR20070064346(A) |
申请公布日期 |
2007.06.20 |
申请号 |
KR20077008883 |
申请日期 |
2005.10.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H. |
分类号 |
H01L21/336;H01L21/8238;H01L21/84;H01L27/12;H01L29/04;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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