CMOS IMAGE SENSOR

摘要

A CMOS image sensor is provided to obtain an amplified photo current and reduce the time of chare storage. A CMOS image sensor is formed on a first conductive type semiconductor substrate. The CMOS image sensor includes a PMOSFET(P channel MOS Field Effect Transistor) and an output portion. The PMOSFET(210) includes a second conductive type well. The PMOSFET is used for receiving light and transforming the light into an electrical signal. The output portion is used for outputting the electric signal transmitted from the PMOSFET. A gate of the PMOSFET is electrically connected with the second conductive type well.