| 摘要 |
A method for forming an overlay key pattern in a semiconductor device is provided to reduce a defective by preventing inaccurate measurement of an aligning level obtained by undercut of an overlay key. An oxide film is formed on a semiconductor substrate(110), and then is patterned to form a scribe line(112) comprising a first overlay key(114). After the first overlay key is filled with a first material(116), a second material layer is formed on the scribe line comprising the first overlay key. The second material layer is etched using a mask having desired patterns, so that the second overlay key is formed in engraving pattern in an inside of the first overlay key on the scribe line.
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